Modification of Phase Boundaries and Oxide Layer of Ti – TiO2 – Oxidant System, by Intensive Thermo – Chemical Oxidation with Rapid Thickness Growth of Dielectric Oxide Layer n–Conductivity Type

Abstract

Titanium oxidation process is thermodynamically spontaneous, its speed depends on kinetic and diffusion process parameters. According to optical measurements results, the oxide layer formed on titanium has a thickness of only 1.7 nm. A layer of this thickness is formed at room temperature within two hours, and in 40-50 days it grows to 3.5 nm. Created under natural conditions, TiO2 is a non-stoichiometric dielectric oxide of n-type conductivity. The goal of this work is to significantly speed up the oxidation process by thermochemical oxidation and achieve oxide thicknesses over 100μm. An intensive thermo-chemical process creates disorders with oxygen vacancies excess (O□●●) and with a smaller representation of interstitial disorders (Ti ● ^●). In this work, starting from the mentioned disorders - defects, by thermo-chemical oxidation of Ti - TiO2 - oxidant system, by choosing numerous oxidants, a composite system was obtained with a significant increase in disorder degree of active centers - defects about 1018 to 1020/cm3 . Thus, the significantly disordered structure of Ti – TiO2 – oxidant system can be a very active dielectric diode in Ti – TiO2 – M system (where M is some vaporized metal). Such a diode has stable rectification properties at high temperatures up to 106 times, which makes it more reliable compared to the active element of semiconductive p-n diode system.